Storage element,  memory  and electronic apparatus

ABSTRACT

A storage element is provided. The storage element includes a memory layer having a first magnetization state of a first material; a fixed magnetization layer having a second magnetization state of a second material; an intermediate layer including a nonmagnetic material and provided between the memory layer and the fixed magnetization layer; wherein the first material includes Co—Fe—B alloy, and at least one of a non-magnetic metal and an oxide.

CROSS REFERENCES TO RELATED APPLICATIONS

The present application is a Continuation of U.S. application Ser. No.14/055,386, filed on Oct. 16, 2013, which is a Continuation of U.S.application Ser. No. 13/226,983, filed on Sep. 7, 2011, which claimspriority to Japanese Priority Patent Application JP 2010-205262 filed inthe Japan Patent Office on Sep. 14, 2010, the entire contents of whichare hereby incorporated by reference.

BACKGROUND

The present disclosure relates to a memory element that includes amemory layer that stores the magnetization state of a ferromagneticlayer as information and a magnetization-fixed layer in which amagnetization direction is fixed, and that changes the magnetizationdirection of the memory layer by flowing a current, and a memory devicehaving the memory element.

In an information device such as a computer, a highly dense DRAM thatoperates at a high speed has been widely used as a random access memory.

However, the DRAM is a volatile memory in which information is erasedwhen power is turned off, such that a non-volatile memory in which theinformation is not erased is desirable.

In addition, as a candidate for the non-volatile memory, a magneticrandom access memory (MRAM) in which the information is recorded bymagnetization of a magnetic material has attracted attention andtherefore has been developed.

The MRAM makes a current flow to two kinds of address interconnects (aword line and a bit line) that are substantially perpendicular to eachother, respectively, and inverts the magnetization of a magnetic layerof a magnetic memory element, which is located at an intersection of theaddress interconnects, of the memory device by using a current magneticfield generated from each of the address interconnects, and therebyperforms the recording of information.

A schematic diagram (perspective view) of a general MRAM is shown inFIG. 7.

A drain region 108, a source region 107, and a gate electrode 101, whichmake up a selection transistor that selects each memory cell, are formedat portions separated by an element separation layer 102 of asemiconductor substrate 110 such as a silicon substrate, respectively.

In addition, a word line 105 extending in the front-back direction inthe drawing are provided at an upper side of the gate electrode 101.

The drain region 108 is formed commonly to left and right selectiontransistors in the drawing, and an interconnect 109 is connected to thedrain region 108.

In addition, magnetic memory elements 103, each having a memory layerwhose magnetization direction is inverted, are disposed between the wordline 105 and bit lines 106 that are disposed at an upper side inrelation to the word line 105 and extend in the left-right direction inthe drawing. These magnetic memory elements 103 are configured, forexample, by a magnetic tunnel junction element (MTJ element).

In addition, the magnetic memory elements 103 are electrically connectedto the source region 107 through a horizontal bypass line 111 and avertical contact layer 104.

When a current is made to flow to the word line 105 and the bit lines106, a current magnetic field is applied to the magnetic memory element103 and thereby the magnetization direction of the memory layer of themagnetic memory element 103 is inverted, and therefore it is possible toperform the recording of information.

In addition, in regard to a magnetic memory such as the MRAM, it isnecessary for the magnetic layer (memory layer) in which the informationis recorded to have a constant coercive force in order to stably retainthe recorded information.

On the other hand, it is necessary to make a certain amount of currentflow to the address interconnect to order to rewrite the recordedinformation.

However, along with miniaturization of the element making up the MRAM,the address interconnect becomes thin, such that it is difficult to flowa sufficient current.

Therefore, as a configuration capable of realizing the magnetizationinversion with a relatively small current, a memory having aconfiguration using a magnetization inversion by spin injection hasattracted attention (for example, refer to Japanese Unexamined PatentApplication Publication Nos. 2003-17782 and 2008-227388, and aspecification of U.S. Pat. No. 6,256,223, PHYs. Rev. B, 54.9353 (1996),and J. Magn. Mat., 159, L1 (1996).

Magnetization inversion by the spin injection means that a spinpolarized electron after passing through a magnetic material is injectedto the other magnetic material, and thereby magnetization inversion iscaused in the other magnetic material.

For example, when a current is made to flow to a giant magnetoresistiveeffect element (GMR element) or a magnetic tunnel junction element (MTJelement) in a direction perpendicular to a film face, the magnetizationdirection of at least a part of the magnetic layer of this element maybe inverted.

In addition, magnetization inversion by spin injection has an advantagein that even when the element becomes minute, it is possible realize themagnetization inversion without increasing the current.

A schematic diagram of the memory device having a configuration usingmagnetization inversion by the above-described spin injection is shownin FIGS. 8 and 9. FIG. 8 shows a perspective view, and FIG. 9 shows across-sectional view.

A drain region 58, a source region 57, and a gate electrode 51 that makeup a selection transistor for the selection of each memory cell areformed, respectively, in a semiconductor substrate 60 such as a siliconsubstrate at portions isolated by an element isolation layer 52. Amongthem, the gate electrode 51 also functions as a word line extending inthe front-back direction in FIG. 8.

The drain region 58 is formed commonly to left and right selectiontransistors in FIG. 8, and an interconnect 59 is connected to the drainregion 58.

A memory element 53 having a memory layer in which a magnetizationdirection is inverted by spin injection is disposed between the sourceregion 57 and bit lines 56 that are disposed in an upper side of thesource region 57 and extend in the left-right direction in FIG. 8.

This memory element 53 is configured by, for example, a magnetic tunneljunction element (MTJ element). The memory element 53 has two magneticlayers 61 and 62. In the two magnetic layers 61 and 62, one sidemagnetic layer is set as a magnetization-fixed layer in which themagnetization direction is fixed, and the other side magnetic layer isset as a magnetization-free layer in which that magnetization directionvaries, that is, a memory layer.

In addition, the memory element 53 is connected to each bit line 56 andthe source region 57 through the upper and lower contact layers 54,respectively. In this manner, when a current is made to flow to thememory element 53, the magnetization direction of the memory layer maybe inverted by spin injection.

In the case of the memory device having a configuration using magneticinversion by this spin injection, it is possible to make the structureof the device simple compared to the general MRAM shown in FIG. 7, andtherefore it has a characteristic in that high densification isrealized.

In addition, when magnetization inversion by the spin injection is used,there is an advantage in that even as miniaturization of the elementproceeds, the write current is not increased, compared to the generalMRAM performing magnetization inversion by an external magnetic field.

SUMMARY

However, in the case of the MRAM, a write interconnect (word line or bitline) is provided separately from the memory element, and the writing ofinformation (recording) is performed using a current magnetic fieldgenerated by flowing a current to the write interconnect. Therefore, itis possible to make a sufficient amount of current necessary for thewriting flow to the write interconnect.

On the other hand, in the memory device having a configuration usingmagnetization inversion by spin injection, it is necessary to invert themagnetization direction of the memory layer by performing spin injectionusing a current flowing to the memory element.

Since the writing (recording) of information is performed by directlyflowing a current to the memory element as described above, a memorycell is configured by connecting the memory element to a selectiontransistor to select a memory cell that performs the writing. In thiscase, the current flowing to the memory element is restricted to acurrent magnitude capable of flowing to the selection transistor (asaturation current of the selection transistor).

Therefore, it is necessary to perform writing with a current equal to orless than the saturation current of the selection transistor, andtherefore it is necessary to diminish the current flowing to the memoryelement by improving spin injection efficiency.

In addition, to increase the read-out signal strength, it is necessaryto secure a large magnetoresistance change ratio, and to realize this,it is effective to adopt a configuration where an intermediate layerthat comes into contact with both sides of the memory layer is set as atunnel insulation layer (tunnel barrier layer).

In this way, in a case where the tunnel insulation layer is used as theintermediate layer, the amount of current flowing to the memory elementis restricted to prevent the insulation breakdown of the tunnelinsulation layer. From this viewpoint, it is also necessary to restrictthe current at the time of spin injection.

Since such a current value is proportional to a film thickness of thememory layer and is proportional to the square of the saturationmagnetization of the memory layer, it may be effective to adjust these(film thickness and saturated magnetization) to decrease such a currentvalue (for example, refer to F. J. Albert et al., Appl. Phy. Lett., 77,3809 (2000).

For example, in F. J. Albert et al., Appl. Phy. Lett., 77, 3809 (2000),the fact that when the amount of magnetization (Ms) of the recordingmaterial is decreased, the current value may be diminished is disclosed.

However, on the other hand, if the information written by the current isnot stored, a non-volatile memory is not realized. That is, it isnecessary to secure a stability (thermal stability) against the thermalfluctuation of the memory layer.

In the case of the memory element using magnetization inversion by spininjection, since the volume of the memory layer becomes small, simplyconsidered the thermal stability tends to decrease, compared to the MRAMin the related art.

When thermal stability of the memory layer is not secured, the invertedmagnetization direction re-inverts by heating, and this leads to writingerror.

In addition, in a case where high capacity of the memory element usingmagnetization inversion by the spin injection is advanced, the volume ofthe memory element becomes smaller, such that the securing of thethermal stability becomes an important problem.

Therefore, in regard to the memory element using the magnetizationinversion by spin injection, thermal stability is a very importantcharacteristic.

Therefore, to realize a memory element having a configuration where themagnetization direction of the memory layer as a memory is inverted byspin injection, it is necessary to diminish the current necessary forthe magnetization inversion by spin injection to a value equal to orless than the saturation current of the transistor, and thereby securingthermal stability for retaining written information reliably.

As described above, to diminish the current necessary for themagnetization inversion by spin injection, diminishing the saturatedmagnetization amount Ms of the memory layer, or making the memory layerthin may be considered. For example, as is the case with U.S. Pat. No.7,242,045, it is effective to use a material having a small saturatedmagnetization amount Ms as the material for the memory layer. However,in this way, in a case where the material having the small saturatedmagnetization amount Ms is simply used, it is difficult to securethermal stability for reliably retaining information.

Therefore, in this disclosure, it is desirable to provide a memoryelement capable of improving thermal stability without increasing thewrite current, and a memory device with the memory element.

According to an example embodiment, there is provided a memory elementincluding a layered structure. The layered structure includes a memorylayer that has a magnetization perpendicular to a film face and of whicha magnetization direction varies corresponding to information, amagnetization-fixed layer that has a magnetization that is perpendicularto the film face and becomes a reference for the information stored inthe memory layer, and an insulating layer that is provided between thememory layer and the magnetization-fixed layer and is formed of anon-magnetic material. An electron that is spin-polarized is injected ina lamination direction of the layered structure and thereby themagnetization direction of the memory layer varies and a recording ofinformation is performed with respect to the memory layer, a magnitudeof an effective diamagnetic field which the memory layer receives issmaller than a saturated magnetization amount of the memory layer. Inregard to the insulating layer that comes into contact with the memorylayer, and the other side layer with which the memory layer comes intocontact at a side opposite to the insulating layer, at least aninterface that comes into contact with the memory layer is formed of anoxide film, and the memory layer includes at least one of non-magneticmetal and oxide in addition to a Co—Fe—B magnetic layer.

In addition, in regard to the insulating layer and the other side layer,at least a layer of an interface that comes into contact with the memorylayer may be formed of an MgO film.

In addition, the non-magnetic metal included in the memory layer may beany one of Ti, V, Nb, Zr, Ta, Hf, and Y.

In addition, the oxide included in the memory layer may be any one ofMgO, SiO₂, and Al—O.

In addition, the layered structure may includes a cap layer provided asthe other side layer that comes into contact with the memory layer, thatis, the layered structure may be a single structure.

In addition, the layered structure may includes a second insulatinglayer provided as the other side layer that comes into contact with thememory layer, and a second magnetization-fixed layer may be providedthrough the second insulating layer, that is, the layered structure maybe a dual structure.

In addition, according to another, there is provided a memory elementincluding a layered structure. The layered structure includes a memorylayer that has a magnetization perpendicular to a film face and of whicha magnetization direction varies corresponding to information, amagnetization-fixed layer that has a magnetization that is perpendicularto the film face and becomes a reference for the information stored inthe memory layer, and an insulating layer that is provided between thememory layer and the magnetization-fixed layer and is formed of anon-magnetic material. An electron that is spin-polarized is injected ina lamination direction of the layered structure and thereby themagnetization direction of the memory layer varies and a recording ofinformation is performed with respect to the memory layer, a magnitudeof an effective diamagnetic field which the memory layer receives issmaller than a saturated magnetization amount of the memory layer, andthe memory layer includes at least one of non-magnetic metal and oxidein addition to a Co—Fe—B magnetic layer.

According to another, there is provided a memory device including amemory element that retains information through the magnetization stateof a magnetic material, and two kinds of interconnects that intersecteach other, wherein the memory element has the configuration of theabove-described memory element according to the, the memory element isdisposed between the two kinds of interconnects, and a current flows tothe memory element in the lamination direction through the two kinds ofinterconnects, and thereby a spin-polarized electron is injected intothe memory element.

According to the configuration of the memory element of the, a memorylayer that retains information through a magnetization state of amagnetic material is provided, a magnetization-fixed layer is providedover the memory layer through a intermediate layer, the intermediatelayer is formed of an insulating material, an electron that isspin-polarized is injected in a lamination direction and thereby themagnetization direction of the memory layer is changed and a recordingof information is performed with respect to the memory layer, andtherefore it is possible to perform the recording of the information byflowing a current in the lamination direction and by injecting aspin-polarized electron.

In addition, the magnitude of an effective diamagnetic field which thememory layer receives is smaller than a saturated magnetization amountof the memory layer, such that the diamagnetic field which the memorylayer receives decreases, and therefore it is possible to diminish theamount of the write current necessary for inverting the magnetizationdirection of the memory layer.

On the other hand, it is possible to diminish the amount of the writecurrent even when the saturated magnetization amount of the memory layeris not diminished, such that the saturated magnetization amount of thememory layer becomes sufficient, and it is possible to sufficientlysecure thermal stability of the memory layer.

In addition, in regard to the insulating layer and the other side layer,at least a layer of an interface that comes into contact with the memorylayer is formed of an oxide film such as MgO film, such that upper andlower interfaces of the memory layer that is a ferromagnetic layer comeinto contact with the oxide film. In this configuration, the memorylayer includes at least one of non-magnetic metal and oxide in additionto a Co—Fe—B magnetic layer. When, oxide is present at the upper andlower sides of the memory layer to which at least one of thenon-magnetic metal and the oxide is added, coercive force and thermalstability are improved. This is considered to be because when at leastone of the non-magnetic metal and the oxide is added, the memory layeris brought into contact with two oxide layers at upper and lower sidesand therefore a Co—O coupling or Fe—O coupling, which is considered asan origin of interface perpendicular magnetic anisotropy, is enhanced.

In addition, according to the configuration of the memory device of the,the memory element is disposed between the two kinds of interconnects,and a current flows to the memory element in the lamination directionthrough the two kinds of interconnects, and thereby a spin-polarizedelectron is injected to the memory element. Therefore, it is possible toperform the recording of information by a spin injection by flowing acurrent in the lamination direction of the memory element through thetwo kinds of interconnects.

In addition, even when the saturated magnetization amount is notdiminished, it is possible to diminish the amount of the write currentof the memory element, such that it is possible to stably retain theinformation recorded in the memory element and it is possible todiminish the power consumption of the memory device.

According to the embodiments of the present disclosure, even when thesaturated magnetization amount of the memory layer is not diminished,the amount of the write current of the memory element may be diminished,such that the thermal stability representing the information retainingability is sufficiently secured, and it is possible to configure amemory element excellent in a characteristic balance.

Particularly, the memory layer comes into contact with the oxide film atboth sides thereof, and the memory layer includes at least one ofnon-magnetic metal and oxide in addition to a Co—Fe—B magnetic layer,such that perpendicular magnetic anisotropy increases, and coerciveforce and thermal stability are improved.

Therefore, it is possible to realize a memory device that operatesstably with high reliability.

In addition, the write current is diminished, such that it is possibleto diminish power consumption during performing the writing into thememory element. Therefore, it is possible to diminish the powerconsumption of the entirety of the memory device.

Additional features and advantages are described herein, and will beapparent from the following Detailed Description and the figures.

BRIEF DESCRIPTION OF THE FIGURES

FIG. 1 is an explanatory view illustrating a schematic configuration ofa memory device according to an;

FIGS. 2A and 2B are cross-sectional views illustrating a memory elementaccording the embodiment;

FIG. 3 is a diagram illustrating a relationship between an amount of Coof a memory layer of 0.09×0.18 μm size and an inversion current density;

FIG. 4 is a diagram illustrating a relationship between an amount of Coof a memory layer of 0.09×0.18 μm size and an index of thermalstability;

FIG. 5 is a diagram illustrating a relationship between an amount of Coof a memory layer of 50 nm φ size and an index of thermal stability;

FIGS. 6A to 6E are explanatory views illustrating a layer structure of alayered structure of an experiment 5 according to the embodiment;

FIG. 7 is a perspective view schematically illustrating a configurationof an MRAM in the related art.

FIG. 8 is an explanatory view illustrating a configuration of a memorydevice using magnetic inversion by spin injection; and

FIG. 9 is a cross-sectional view of a memory device in FIG. 8.

DETAILED DESCRIPTION

Embodiments of the present application will be described below in detailwith reference to the drawings.

1. Outline of Memory Element of Embodiment

2. Configuration of Embodiment

3. Experiment

1. OUTLINE OF MEMORY ELEMENT OF EMBODIMENT

First, outline of a memory element of an embodiment according to thepresent disclosure will be described.

The embodiment according to the present disclosure performs therecording of information by inverting a magnetization direction of amemory layer of a memory element by the above-described spin injection.

The memory layer is formed of a magnetic material such as ferromagneticlayer, and retains information through the magnetization state(magnetization direction) of the magnetic material.

It will be described later in detail, but the memory element has alayered structure whose example is shown in FIGS. 2A and 2B, andincludes a memory layer 17 and a magnetization-fixed layer 15 as twomagnetic layers, and an insulating layer 16 (tunnel insulating layer) asan intermediate layer provided between the two magnetic layers.

The memory layer 17 has a magnetization perpendicular to a film face anda magnetization direction varies corresponding to information.

The magnetization-fixed layer 15 has a magnetization that is a referencefor the information stored in the memory layer 17 and is perpendicularto the film face.

The insulating layer 16 is formed of a non-magnetic material and isprovided between the memory layer 17 and the magnetization-fixed layer15. In this embodiment, the insulating layer 16 is formed of an oxidefilm, for example, MgO (magnesium oxide).

Spin-polarized electrons are injected in the lamination direction of alaminated structure having the memory layer 17, the insulating layer 16,and the magnetization-fixed layer 15, and the magnetization direction ofthe memory layer 17 is changed and thereby information is recorded inthe memory layer 17.

In this embodiment, the other side layer with which the memory layer 17comes into contact at the upper side of the memory layer 17, that is, ata side opposite to the insulating layer 16 includes a cap layer 18 (inthe case of FIG. 2A) or an upper insulating layer 16U (in the case ofFIG. 2B). In this embodiment, at least a face, which comes into contactwith the memory layer 17, of the other side layer (for example, a caplayer 18) with which the memory layer 17 comes into contact is formed ofan oxide film, for example an MgO (magnesium oxide) film. Therefore, thememory layer 17 comes into contact with an oxide film at both upper andlower interfaces.

A basic operation for inverting the magnetization direction of themagnetic layer (memory layer 17) by spin injection is to make a currentof a threshold value or greater flow to the memory element including agiant magnetoresistive effect element (GMR element) or a tunnelmagnetoresistive effect element (MTJ element) in a directionperpendicular to a film face. At this time, the polarity (direction) ofthe current depends on the inverted magnetization direction.

In a case where a current having an absolute value less than thethreshold value is made to flow, magnetization inversion does not occur.

A threshold value Ic of a current, which is necessary when themagnetization direction of the magnetic layer is inverted by spininjection, is expressed by the following equation (1).

Ic=A·α·Ms·V·Hd/2η  (1)

Here, A: constant, α: spin braking constant, η: spin injectionefficiency, Ms: saturated magnetization amount, V: volume of memorylayer, and Hd: effective diamagnetic field.

As expressed by the equation (1), a threshold value of a current may beset to an arbitrary value by controlling the volume V of the magneticlayer, the saturated magnetization Ms of the magnetic layer, and thespin injection efficiency η, and the spin braking constant α,

In this embodiment, the memory element includes the magnetic layer(memory layer 17) that is capable of retaining information through themagnetization state, and the magnetization-fixed layer 15 whosemagnetization direction is fixed.

The memory element has to retain written information so as to functionas a memory. This is determined by a value of an index Δ (=KV/k_(B)T) ofthermal stability as an index of ability of retaining information. Theabove-described Δ is expressed by the following equation (2).

Δ=KV/k _(B) T=Ms·V·H _(k)·(½k _(B) T)  (2)

Here, H_(k): effective anisotropy field, k_(B): Boltzmann's constant, T:temperature, Ms: saturated magnetization amount, and V: volume of memorylayer.

The effective anisotropy field H_(k) receives an effect by a shapemagnetic anisotropy, an induced magnetic anisotropy, and a crystalmagnetic anisotropy, or the like, and when assuming a coherent rotationmodel of a single domain, the effective anisotropy field becomes thesame as the coercive force.

The index Δ of the thermal stability and the threshold value Ic of thecurrent are often in a trade-off relationship. Therefore, compatibilityof these becomes an issue to retain the memory characteristic.

In regard to the threshold value of the current that changes themagnetization state of the memory layer 17, actually, for example, in aTMR element in which the thickness of the memory layer 17 is 2 nm, and aplanar pattern is substantially an elliptical shape of 100 nm×150 nm, athreshold value +Ic of a positive side is +0.5 mA, a threshold value −Icof a negative side is −0.3 mA, and a current density at this time issubstantially 3.5×10⁶ A/cm². These substantially correspond to theabove-described equation (1).

On the contrary, in a common MRAM that performs a magnetizationinversion using a current magnetic field, a write current of several mAor more is necessary.

Therefore, in case of performing magnetization inversion by spininjection, the threshold value of the above-described write currentbecomes sufficiently small, such that this is effective for diminishingpower consumption of an integrated circuit.

In addition, an interconnect (interconnect 105 of FIG. 10) for thegeneration of the current magnetic field, which is necessary for acommon MRAM, is not necessary, such that in regard to the degree ofintegration, it is advantageous compared to the common MRAM.

In the case of performing the magnetization inversion by spin injection,since the writing (recording) of information is performed by directlyflowing a current to the memory element, to select a memory cell thatperforms the writing, the memory element is connected to a selectiontransistor to construct the memory cell.

In this case, the current flowing to the memory element is restricted toa current magnitude (saturated current of the selection transistor) thatcan be made to flow to the selection transistor.

To make the threshold value Ic of a current of the magnetizationinversion by the spin injection smaller than the saturated current ofthe selection transistor, as can be seen from the equation (1), it iseffective to diminish the saturated magnetization amount Ms of thememory layer 17.

However, in the case of simply diminishing the saturated magnetizationamount Ms (for example, U.S. Pat. No. 7,242,045), the thermal stabilityof the memory layer 17 is significantly deteriorated, and therefore itis difficult for the memory element to function as a memory.

To construct the memory, it is necessary that the index Δ of the thermalstability is equal to or greater than a magnitude of a certain degree.

The present inventors have made various studies, and as a resultthereof, they have found that when for example, a composition of Co—Fe—Bis selected as the ferromagnetic layer making up the memory layer 17,the magnitude of the effective diamagnetic field (M_(effective)) whichthe memory layer 17 receives becomes smaller than the saturatedmagnetization amount Ms of the memory layer 17.

By using the above-described ferromagnetic material, the magnitude ofthe effective diamagnetic field which the memory layer 17 receivesbecomes smaller than the saturated magnetization amount Ms of the memorylayer 17.

In this manner, it is possible to make the diamagnetic field which thememory layer 17 receives small, such that it is possible to obtain aneffect of diminishing the threshold value Ic of a current expressed bythe equation (1) without deteriorating the thermal stability Δ expressedby the equation (2).

In addition, the present inventors has found that Co—Fe—B magnetizes ina direction perpendicular to a film face within a restricted compositionrange of the selected Co—Fe—B composition, and due to this, it ispossible to secure a sufficient thermal stability even in the case of aextremely minute memory element capable of realizing Gbit classcapacity.

Therefore, in regard to a spin injection-type memory of the Gbit, it ispossible to make a stable memory in which information may be writtenwith a low current in a state where the thermal stability is secured.

In this embodiment, it is configured such that the magnitude of theeffective diamagnetic field which the memory layer 17 receives is madeto be less than the saturated magnetization amount Ms of the memorylayer 17, that is, a ratio of the magnitude of the effective diamagneticfield with respect to the saturated magnetization amount Ms of thememory layer 17 becomes less than 1.

In addition, a magnetic tunnel junction (MTJ) element is configured byusing a tunnel insulating layer (insulating layer 16) formed of aninsulating material as the non-magnetic intermediate layer disposedbetween the memory layer 17 and the magnetization-fixed layer 15 inconsideration of the saturated current value of the selectiontransistor.

The magnetic tunnel junction (MTJ) element is configured by using thetunnel insulating layer, such that it is possible to make amagnetoresistance change ratio (MR ratio) large compared to a case wherea giant magnetoresistive effect (GMR) element is configured by using anon-magnetic conductive layer, and therefore it is possible to increasethe read-out signal strength.

Particularly, when magnesium oxide (MgO) is used as the material of thetunnel insulating layer 16, it is possible to make the magnetoresistancechange ratio (MR ratio) large compared to a case where aluminum oxide,which can be generally used, is used.

In addition, generally, spin injection efficiency depends on the MRratio, and the larger the MR ratio, the more spin injection efficiencyis improved, and therefore it is possible to diminish the magnetizationinversion current density.

Therefore, when magnesium oxide is used as the material of the tunnelinsulating layer 16 and the memory layer 17 is used, it is possible todiminish the threshold write current by spin injection and therefore itis possible to perform the writing (recording) of information with asmall current. In addition, it is possible to increase the read-outsignal strength.

In this manner, it is possible to diminish the threshold write currentby spin injection by securing the MR ratio (TMR ratio), and it ispossible to perform the writing (recording) of information with a smallcurrent. In addition, it is possible to increase the read-out signalstrength.

As described above, in a case where the tunnel insulating layer 16 isformed of the magnesium oxide (MgO) film, it is desirable that the MgOfilm be crystallized and therefore a crystal orientation be maintainedin (001) direction.

In addition, in this embodiment, in addition to a configuration formedof the magnesium oxide, the insulating layer 16 as an intermediate layerdisposed between the memory layer 17 and the magnetization-fixed layer15 may be configured by using, for example, various insulatingmaterials, dielectric materials, and semiconductors such as aluminumoxide, aluminum nitride, SiO₂, Bi₂O₃, MgF₂, CaF, SrTiO₂, AlLaO₃, andAl—N—O.

However, in this embodiment, at least an interface that comes intocontact with the memory layer 17 is formed of an oxide film.

An area resistance value of the tunnel insulating layer 16 is necessaryto be controlled to several tens Ωμm² or less in consideration of theviewpoint of obtaining a current density necessary for inverting themagnetization direction of the memory layer 17 by spin injection.

In the tunnel insulating layer 16 formed of the MgO film, to retain thearea resistance value within the above-described range, it is necessaryto set the film thickness of the MgO film to 1.5 nm or less.

In addition, it is desirable to make the memory element small to easilyinvert the magnetization direction of the memory layer 17 with a smallcurrent.

Therefore, preferably, the area of the memory element is set to 0.01 μm²or less.

It is desirable that the magnetization-fixed layer 15 and the memorylayer 17 have a unidirectional anisotropy. In addition, it is preferablethat the film thickness of each of the magnetization-fixed layer 15 andthe memory layer 17 be 0.5 to 30 nm.

Here, the memory layer 17 of this embodiment includes a Co—Fe—B magneticlayer as a main body, but at least one side of a non-magnetic metal(including Ti, V, Nb, Zr, Ta, Hf, and Y), and oxide (including MgO,siO₂, Al—O) is added to this magnetic layer.

In regard to the memory layer 17 in which the oxide is present at theupper and lower sides thereof and at least one of the non-magnetic metaland the oxide is added thereto, perpendicular magnetic anisotropy isenhanced compared to the case of a single layer of a Co—Fe—B magneticlayer alone, and coercive force and thermal stability KV/k_(B)T arestably improved.

This is considered to be because when at least one of the non-magneticmetal and the oxide is added, the memory layer is brought into contactwith two oxide layers and therefore a Co—O coupling or Fe—O coupling,which is considered to as an origin of interface perpendicular magneticanisotropy, is enhanced.

Other configuration of the memory element may be the same as theconfiguration of a memory element that records information by spininjection in the related art.

The magnetization-fixed layer 15 may be configured in such a manner thatthe magnetization direction is fixed by only a ferromagnetic layer or byusing an anti-ferromagnetic combination of an anti-ferromagnetic layerand a ferromagnetic layer.

In addition, the magnetization-fixed layer 15 may be configured by asingle layer of a ferromagnetic layer, or a ferri-pin structure in whicha plurality of ferromagnetic layers are laminated through a non-magneticlayer.

As a material of the ferromagnetic layer making up themagnetization-fixed layer 15 of the laminated ferri-pin structure, Co,CoFe, CoFeB, or the like may be used. In addition, as a material of thenon-magnetic layer, Ru, Re, Ir, Os, or the like may be used.

As a material of the anti-ferromagnetic layer, a magnetic material suchas an FeMn alloy, a PtMn alloy, a PtCrMn alloy, an NiMn alloy, an IrMnalloy, NiO, and Fe2O3 may be exemplified.

In addition, a magnetic characteristic may be adjusted by adding anon-magnetic element such as Ag, Cu, Au, Al, Si, Bi, Ta, B, C, O, N, Pd,Pt, Zr, Hf, Ir, W, Mo, and Nb to the above-describe magnetic materials,or in addition to this, various physical properties such as acrystalline structure, a crystalline property, a stability of asubstance, or the like may be adjusted.

In addition, in relation to a film configuration of the memory element,the memory layer 17 may be disposed at the lower side of themagnetization-fixed layer 15, or at the upper side thereof, and in anydisposition, there is no problem at all.

In addition, as shown in FIG. 2B, the magnetization-fixed layer 15 maybe disposed at the upper side and the lower side of the memory layer 17,so-called dual-structure.

In addition, as a method of reading-out information recorded in thememory layer 17 of the memory element, a magnetic layer that becomes areference for the information is provided on the memory layer 17 of thememory element through a thin insulating film, and the reading-out maybe performed by a ferromagnetic tunnel current flowing through theinsulating layer 16, or the reading-out may be performed by amagnetoresistive effect.

2. CONFIGURATION OF EMBODIMENT

Subsequently, a specific configuration of this will be described.

As an, a schematic configuration diagram (perspective view) of a memorydevice is shown in FIG. 1.

This memory device includes a memory element 3, which can retaininformation at the magnetization state, disposed in the vicinity of anintersection of two kinds of address interconnects (for example, a wordline and a bit line) that are perpendicular to each other.

Specifically, a drain region 8, a source region 7, and a gate electrode1 that make up a selection transistor that selects each memory cell areformed in a portion separated by an element separation layer 2 of asemiconductor substrate 10 such as a silicon substrate, respectively.Among them, the gate electrode 1 also functions as one side addressinterconnect (for example, a word line) that extends in the front-backdirection in the drawing.

The drain region 8 is formed commonly with left and right selectiontransistors in the drawing, and an interconnect 9 is connected to thedrain region 8.

The memory element 3 is disposed between the source region 7, and theother side address interconnect (for example, a bit line) 6 that isdisposed at the upper side and extends in the left-right direction inthe drawing. This memory element 3 has a memory layer including aferromagnetic layer whose magnetization direction is inverted by spininjection.

In addition, the memory element 3 is disposed in the vicinity of anintersection of two kinds of address interconnects 1 and 6.

The memory element 3 is connected to the bit line 6 and the sourceregion 7 through upper and lower contact layers 4, respectively.

In this manner, a current flows into the memory element 3 in theperpendicular direction thereof through the two kind of addressinterconnects 1 and 6, and the magnetization direction of the memorylayer may be inverted by a spin injection.

In addition, a cross-sectional view of the memory element 3 of thememory device according to this embodiment is shown in FIGS. 2A and 2B.

First, FIG. 2A is an example of so-called a single structure, and in thememory element 3, an underlying layer 14, the magnetization-fixed layer15, the insulating layer 16, the memory layer 17, and the cap layer 18are laminated in this order from a lower layer side.

In this case, the magnetization-fixed layer 15 is provided at a lowerlayer in relation to a memory layer 17 in which the magnetizationdirection of a magnetization M17 is inverted by a spin injection.

In regard to the spin injection type memory, “0” and “1” of informationare defined by a relative angle between the magnetization M17 of thememory layer 17 and a magnetization M15 of the magnetization-fixed layer15.

An insulating layer 16 that serves as a tunnel barrier layer (tunnelinsulating layer) is provided between the memory layer 17 and themagnetization-fixed layer 15, and therefore an MTJ element is configuredby the memory layer 17 and the magnetization-fixed layer 15. Inaddition, an anti-ferromagnetic layer 19 is formed under themagnetization-fixed layer 15.

The memory layer 17 is formed of a ferromagnetic material having amagnetic moment in which the direction of a magnetization M17 is freelychanged in a direction perpendicular to a film face. Themagnetization-fixed layer 15 is formed of a ferromagnetic materialhaving a magnetic moment in which a magnetization M15 is fixed in thedirection perpendicular to the film face.

The storage of information is performed by a magnetization direction ofthe memory layer 17 having a unidirectional anisotropy. The writing ofinformation is performed by applying a current in the directionperpendicular to the film face and by causing a spin torquemagnetization inversion. In this way, the magnetization-fixed layer 15is provided at a lower layer in relation to the memory layer 17 in whichthe magnetization direction is inverted by the spin injection, andserves as a reference for the memory information (magnetizationdirection) of the memory layer 17.

In this embodiment, Co—Fe—B is used for the memory layer 17 and themagnetization-fixed layer 15. Particularly, the memory layer 17 isconfigured in such a manner that at least one of non-magnetic metal andoxide is added thereto.

The magnetization-fixed layer 15 serves as the reference for theinformation, such that it is necessary that the magnetization directiondoes not vary, but it is not necessarily necessary to be fixed in aspecific direction. The magnetization-fixed layer 15 may be configuredin such a manner that migration becomes more difficult than in thememory layer 17 by making a coercive force large, by making the filmthickness large, or by making a damping constant large compared to thememory layer 17.

In the case of fixing the magnetization, an anti-ferromagnetic materialsuch as PtMn and IrMn may be brought into contact with themagnetization-fixed layer 15, or a magnetic material brought intocontact with such an anti-ferromagnetic material may be magneticallycombined through a non-magnetic material such as Ru, and thereby themagnetization-fixed layer 15 may be indirectly fixed.

Next, FIG. 2B is an example of a layered structure of a dual structureas the embodiment.

In the memory element 3, from a lower layer side, an underlying layer14, a lower magnetization-fixed layer 15L, a lower insulating layer 16L,a memory layer 17, an upper insulating layer 16U, an uppermagnetization-fixed layer 15U, and a cap layer 18 are laminated in thisorder.

That is, the magnetization-fixed layers 15U and 15L are provided withrespect to the memory layer 17 at upper and lower sides thereof throughthe insulating layer 16U and 16L.

In this case, Co—Fe—B is also used for the memory layer 17, the lowermagnetization-fixed layer 15L, and the upper magnetization-fixed layer15U. Particularly, the memory layer 17 is configured in such a mannerthat at least one of non-magnetic metal and oxide is added to theCo—Fe—B.

The lower insulating layer 16L and the upper insulating layer 16U isconfigured by an oxide film such as MgO.

In addition, in such a dual structure, it is necessary that themagnetization direction of the magnetization-fixed layers 15U and 15L isnot changed (magnetization M15U of the upper magnetization-fixed layer15U and magnetization M15L of the lower magnetization-fixed layer 15Lare inverted from each other).

In the embodiment shown in FIGS. 2A and 2B, particularly, a compositionof the memory layer 17 of the memory element 3 is adjusted such that amagnitude of an effective diamagnetic field which the memory layer 17receives becomes smaller than the saturated magnetization amount Ms ofthe memory layer 17.

That is, a composition of a ferromagnetic material Co—Fe—B of the memorylayer 17 is selected, and the magnitude of the effective diamagneticfield which the memory layer 17 receives is made to be small, such thatthe magnitude of the effective diamagnetic field becomes smaller thanthe saturated magnetization amount Ms of the memory layer 17.

In addition, in this embodiment, in a case where the insulating layer 16that is an intermediate layer is formed of a magnesium oxide (MgO)layer. In this case, it is possible to make a magnetoresistive changeratio (MR ratio) high.

When the MR ratio is made to be high as described above, the spininjection efficiency is improved, and therefore it is possible todiminish a current density necessary for inverting the direction of themagnetization M17 of the memory layer 17.

In this embodiment, in the case of the single structure shown in FIG.2A, at least an interface of the cap layer 18, which comes into contactwith the memory layer 17, is formed of oxide such as an MgO film. Inaddition, the insulating layer 16 is also formed of MgO. Therefore, thememory layer 17 formed of Co—Fe—B as a main component is configured tocome into contact with an oxide film at both faces.

In the case of the dual structure shown in FIG. 2B, at least aninterface of the upper and lower insulating layers 16U and 16L, whichcomes into contact with the memory layer 17, is formed of oxide such asan MgO film. Therefore, the memory layer 17 formed of Co—Fe—B as a maincomponent is configured to come into contact with an oxide film at bothfaces.

The memory element 3 of this embodiment can be manufactured bycontinuously forming from the underlying layer 14 to the cap layer 18 ina vacuum apparatus, and then by forming a pattern of the memory element3 by a processing such as a subsequent etching or the like.

According to the above-described embodiment, the memory layer 17 of thememory element 3 is configured in such a manner that the magnitude ofthe effective diamagnetic field that the memory layer 17 receives issmaller than the saturated magnetization amount Ms of the memory layer17, such that the diamagnetic field that the memory layer 17 receives isdecreased, and it is possible to diminish an amount of the write currentnecessary for inverting the direction of the magnetization M17 of thememory layer 17.

On the other hand, since the amount of the write current may bediminished even when the saturated magnetization amount Ms of the memorylayer 17 is not diminished, it is possible to sufficiently secure thesaturated magnetization amount of the memory layer 17 and therefore itis possible to sufficiently secure the thermal stability of the memorylayer 17.

As described above, since it is possible to sufficiently secure thethermal stability that is an information retaining ability, it ispossible to configure the memory element 3 excellent in a characteristicbalance.

Particularly, when both faces of the memory layer 17 come into contactwith an oxide film, and the memory layer 17 is configured in such amanner that at least one of the non-magnetic metal and the oxide isadded to the Co—Fe—B, perpendicular magnetic anisotropy is increased andtherefore it is more advantageous in regard to the increase in thecoercive force and the thermal stability.

In this way, an operation error is removed and an operation margin ofthe memory element 3 is sufficiently obtained, such that it is possibleto stably operate the memory element 3.

Accordingly, it is possible to realize a memory that operates stablywith high reliability.

In addition, the write current is diminished, such that it is possibleto diminish the power consumption when performing the writing into thememory element 3.

Therefore, it is possible to diminish the power consumption of theentirety of the memory device in which a memory cell is configured bythe memory element 3 of this embodiment.

Therefore, in regard to the memory device including the memory element 3capable of realizing a memory device that is excellent in informationretaining ability, has high reliability, and operates stably, it ispossible to diminish the power consumption in a memory device includingthe memory element.

In addition, the memory device that includes a memory element 3 shown inFIGS. 2A and 3A and has a configuration shown in FIG. 1 has an advantagein that a general semiconductor MOS forming process may be applied whenthe memory device is manufactured.

Therefore, it is possible to apply the memory device of this embodimentas a general purpose memory.

3. EXPERIMENT

Here, in regard to the configuration of the memory element of thisembodiment, by specifically selecting the material of the ferromagneticlayer making up the memory layer 17, the magnitude of the effectivediamagnetic field that the memory layer 17 receives was adjusted, andthereby a sample of the memory element 3 was manufactured, and thencharacteristics thereof was examined.

In an actual memory device, as shown in FIG. 1, a semiconductor circuitfor switching or the like present in addition to the memory element 3,but here, the examination was made on a wafer in which only the memoryelement is formed for the purpose of investigating a magnetizationinversion characteristic of the memory layer 17.

In addition, in the following experiments 1 to 4, investigation is madeinto a configuration where a magnitude of the effective diamagneticfield which the memory layer 17 receives is made to be small, andthereby the magnitude of an effective diamagnetic field which the memorylayer receives is smaller than a saturated magnetization amount of thememory layer 17, by selecting a composition of the ferromagneticmaterial, that is, Co—Fe—B of the memory layer 17.

In addition, in experiments 5 and 6, investigation is made into anadvantage due to a configuration in which the upper and lower interfacesof the memory layer 17 comes into contact with oxide and due to astructure in which the memory layer 17 is formed of Co—Fe—B to which atleast one of the non-magnetic metal and the oxide is added, instead ofbeing formed of a single layer of Co—Fe—B.

Experiment 1

A thermal oxide film having a thickness of 300 nm was formed on asilicon substrate having a thickness of 0.725 mm, and the memory element3 having a configuration shown in FIG. 2B was formed on the thermaloxide film.

Specifically, in regard to the memory element 3 shown in FIG. 2B, amaterial and a film thickness of each layer were selected as describedbelow.

-   -   Underlying layer 14: Laminated film of a Ta film having a film        thickness of 10 nm and a Ru film having a film thickness of 25        nm    -   Magnetization-fixed layer 15: CoFeB film having a film thickness        of 2.5 nm    -   Tunnel insulating layer 16: Magnesium oxide film having a film        thickness of 0.9 nm    -   Memory layer 17: CoFeB film having the same composition as that        of the magnetization-fixed layer    -   Cap layer 18: Laminated film of a Ta film having a film        thickness of 3 nm, a Ru film having a thickness of 3 nm, and a        Ta film having a thickness of 3 nm

Each layer was selected as described above, a Cu film (not shown) havinga film thickness of 100 nm (serving as a word line described below) wasprovided between the underlying layer 14 and the silicon substrate.

In the above-described configuration, the ferromagnetic layer of thememory layer 17 was formed of a ternary alloy of Co—Fe—B, and a filmthickness of the ferromagnetic layer was fixed to 2.0 nm.

Each layer other than the insulating layer 16 formed of a magnesiumoxide film was formed using a DC magnetron sputtering method.

The insulating layer 16 formed of the magnesium oxide (MgO) film wasformed using a RF magnetron sputtering method.

In addition, after forming each layer of the memory element 3, a heatingtreatment was performed in a magnetic field heat treatment furnace.

Next, after masking a word line portion by a photolithography, aselective etching by Ar plasma was performed with respect to a laminatedfilm other than the word line portion, and thereby the word line (lowerelectrode) was formed.

At this time, a portion other than the word line was etched to the depthof 5 nm in the substrate.

Then, a mask of a pattern of the memory element 3 by an electron beamdrawing apparatus was formed, a selective etching was performed withrespect to the laminated film, and thereby the memory element 3 wasformed. A portion other than the memory element 3 was etched to aportion of the word line immediately over the Cu layer.

In addition, in the memory element for the characteristic evaluation, itis necessary to make a sufficient current flow to the memory element soas to generate a spin torque necessary for the magnetization inversion,such that it is necessary to suppress the resistance value of the tunnelinsulating layer. Therefore, a pattern of the memory element 3 was setto an elliptical shape having a short axis of 0.09 μm×a long axis of0.18 μm, and an area resistance value (Ωμm2) of the memory element 3 wasset to 20 Ωμm2.

Next, a portion other than the memory element 3 was insulated bysputtering Al2O3 to have a thickness of substantially 100 nm.

Then, a bit line serving as an upper electrode and a measurement padwere formed by using photolithography.

In this manner, a sample of the memory element 3 was manufactured.

By the above-described manufacturing method, each sample of the memoryelement 3 in which a composition of Co—Fe—B alloy of the ferromagneticlayer of the memory layer 17 was changed was manufactured.

In the composition of the Co—Fe—B alloy, a composition ratio of CoFe andB was fixed to 80:20, and a composition ratio of Co in CoFe, that is,x(atomic %) was changed to 90%, 80%, 70%, 60%, 50%, 40%, 30%, 20%, 10%,and 0%.

With respect to each sample of the memory element 3 manufactured asdescribed above, a characteristic evaluation was performed as describedbelow.

Before the measurement, it was configured to apply a magnetic field tothe memory element 3 from the outside to control an inversion current insuch a manner that a value in a plus direction and a value in a minusdirection to be symmetric to each other.

In addition, a voltage applied to the memory element 3 was set up to 1 Vwithin a range without breaking down the insulating layer 16.

Measurement of Saturated Magnetization Amount

The saturated magnetization amount Ms was measured by a VSM measurementusing a Vibrating Sample Magnetometer.

Measurement of Effective Diamagnetic Field

As a sample for measuring an effective diamagnetic field, in addition tothe above-described sample of the memory element 3, a sample in whicheach layer making up the memory element 3 was formed was manufacturedand then the sample was processed to have a planar pattern of 20 mm×20mm square.

In addition, a magnitude M_(effective) of an effective diamagnetic fieldwas obtained by FMR (Ferromagnetic Resonance) measurement.

A resonance frequency fFMR, which is obtained by the FMR_(measurement),with respect to arbitrary external magnetic field H_(ex) is given by thefollowing equation (3).

f _(FMR)=γ′√{square root over (4πM _(effective)(H _(K) +H _(ex)))}  (3)

Here, M_(effective) in the equation (3) may be _(expressed) by4πM_(effective)=4πMs−H⊥ (H⊥: anisotropy field in a directionperpendicular to a film face).

Measurement of Inversion Current Value and Thermal Stability

An inversion current value was measured for the purpose of evaluatingthe writing characteristic of the memory element 3 according to thisembodiment.

A current having a pulse width of 10 μs to 100 ms is made to flow to thememory element 3, and then a resistance value of the memory element 3was measured.

In addition, the amount of current that flows to the memory element 3was changed, and then a current value at which a direction of themagnetization M17 of the memory layer 17 of the memory element 3 wasinverted was obtained. A value obtained by extrapolating a pulse widthdependency of this current value to a pulse width 1 ns was set to theinversion current value.

In addition, the inclination of a pulse width dependency of theinversion current value corresponds to the above-described index Δ ofthe thermal stability of the memory element 3. The less the inversioncurrent value is changed (the inclination is small) by the pulse width,the more the memory element 3 is strengthened against thermaldisturbance.

In addition, twenty memory elements 3 with the same configuration weremanufactured to take variation in the memory element 3 itself intoconsideration, the above-described measurement was performed, and anaverage value of the inversion current value and the index Δ of thethermal stability were obtained.

In addition, an inversion current density Jc0 was calculated from theaverage value of the inversion current value obtained by the measurementand an area of the planar pattern of the memory element 3.

In regard to each sample of the memory element 3, a composition ofCo—Fe—B alloy of the memory layer 17, measurement results of thesaturated magnetization amount Ms and the magnitude M_(effective) of theeffective diamagnetic field, and a ratio M_(effective)/Ms of effectivediamagnetic field to the saturated magnetization amount were shown inTable 1. Here, an amount x of Co of Co—Fe—B alloy of the memory layer 17described in Table 1 was expressed by an atomic %.

TABLE 1 Ms(emu/cc) Meffctive(emu/cc) Meffective/Ms (Co₉₀Fe₁₀)₈₀—B₂₀ 9601210 1.26 (Co₈₀Fe₂₀)₈₀—B₂₀ 960 1010 1.05 (Co₇₀Fe₃₀)₈₀—B₂₀ 1040 900 0.87(Co₆₀Fe₄₀)₈₀—B₂₀ 1200 830 0.69 (Co₅₀Fe₅₀)₈₀—B₂₀ 1300 690 0.53(Co₄₀Fe₆₀)₈₀—B₂₀ 1300 500 0.38 (Co₃₀Fe₇₀)₈₀—B₂₀ 1260 390 0.31(Co₂₀Fe₈₀)₈₀—B₂₀ 1230 360 0.29 (Co₁₀Fe₉₀)₈₀—B₂₀ 1200 345 0.29 Fe₈₀—B₂₀1160 325 0.28

From the table 1, in a case where the amount x of Co in(Co_(x)Fe_(100-x))₈₀B₂₀ was 70% or less, the magnitude of the effectivediamagnetic field (M_(effective)) was smaller than the saturatedmagnetization amount Ms, that is, the ratio of M_(effective)/Ms in acase where the amount x of Co was 70% or less became a value less than1.0.

In addition, it was confirmed that the more the amount x of Codecreased, the larger the difference between M_(effective) and Ms.

A measurement result of the inversion current value was shown in FIG. 4,and a measurement result of the index of the thermal stability was shownin FIG. 5.

FIG. 4 shows a relationship between the amount x (content in CoFe;atomic %) of Co in the Co—Fe—B alloy of the memory layer 17 and theinversion current density Jc0 obtained from the inversion current value.

FIG. 5 shows a relationship between an amount x (content in CoFe; atomic%) of Co in the Co—Fe—B alloy of the memory layer 17 and the indexΔ(KV/kBT) of the thermal stability.

As can be seen from FIG. 4, as the amount x of Co decreases, theinversion current density Jc0 decreases.

This is because in a case where the amount x of Co becomes small, thesaturated magnetization amount Ms increases, but the effectivediamagnetic field M_(effective) decreases, and therefore the product ofthem Ms×M_(effective) becomes small.

As can be seen from FIG. 5, as the amount x of Co decreased, the index Δ(=KV/k_(B)T) of the thermal stability increased, and in a case where theamount x of Co became more or less small to a degree, the index Δ of thethermal stability became stable to a large value.

This well corresponds to a change that is expected from the measurementresult of the saturated magnetization amount Ms shown in Table 1 and atendency where the index Δ of the thermal stability from the equation(2) is proportional to the saturated magnetization amount Ms.

As was clear from the results of Table 1, FIGS. 4 and 5, in acomposition where the amount x of Co was 70% or less and the magnitudeM_(effective) of effective diamagnetic field was less than the saturatedmagnetization amount Ms, it was possible to diminish the inversioncurrent value Jc0 with a high thermal stability maintained, withoutusing a method in which Ms was decreased and therefore the thermalstability was sacrificed.

Experiment 2

As can be seen from the Experiment 1, in the case of(Co_(x)Fe_(100-x))₈₀B₂₀, it was possible to diminish the inversioncurrent value Jc0 with a high thermal stability maintained in acomposition where the amount x of Co was 70% or less.

Therefore, in experiment 2, an effect on a ratio of Co and Fe, and theM_(effective)/Ms, which was caused by an amount of B, was examined byusing a memory layer 17 having a composition (Co₇₀Fe₃₀)₈₀B_(z) and acomposition (Co₈₀Fe₂₀)₈₀B_(z). The details of a sample weresubstantially the same as those in the experiment 1.

Table 2 shows compositions of CoFeB alloy in which the amount z of B wasset to 5 to 40% in (Co₇₀Fe₃₀)_(100-Z)B_(z), results of measurement ofthe saturated magnetization amount Ms and the magnitude M_(effective) ofthe effective diamagnetic field, and a ratio M_(effective)/Ms of thesaturated magnetization amount and the magnitude of the effectivediamagnetic field.

In addition, Table 3 shows compositions of CoFeB alloy in which theamount z (atomic %) of B was similarly set to 5 to 40% in(Co₈₀Fe₂₀)_(100-z)B_(z), and a ratio M_(effective)/Ms of the saturatedmagnetization amount Ms and the magnitude M_(effective) of the effectivediamagnetic field.

TABLE 2 Ms(emu/cc) Meffective(emu/cc) Meffective/Ms (Co₇₀Fe₃₀)₉₅—B₅ 13101090 0.83 (Co₇₀Fe₃₀)₉₀—B₁₀ 1250 1080 0.89 (Co₇₀Fe₃₀)₈₀—B₂₀ 1040 900 0.87(Co₇₀Fe₃₀)₇₀—B₃₀ 820 730 0.89 (Co₇₀Fe₃₀)₆₀—B₄₀ 450 690 1.53

TABLE 3 Ms(emu/cc) Meffective(emu/cc) Meffective/Ms (Co₈₀Fe₂₀)₉₅—B₅ 12501280 1.02 (Co₈₀Fe₂₀)₉₀—B₁₀ 1100 1140 1.04 (Co₈₀Fe₂₀)₈₀—B₃₀ 960 1010 1.05(Co₈₀Fe₂₀)₇₀—B₃₀ 750 890 1.19 (Co₈₀Fe₂₀)₆₀—B₄₀ 430 690 1.60

From the results of Table 2, it can be confirmed that in a case wherethe ratio of Co and Fe was set to 70/30 like (Co₇₀Fe₃₀)_(100-Z)B_(z),the magnitude M_(effective) of the effective diamagnetic field wassmaller than the saturated magnetization amount Ms in compositions otherthan a composition where the amount z of B was 40 atomic %.

From the results of Table 3, it can be confirmed that in a case wherethe ratio of Co and Fe was set to 80/20 like (Co₈₀Fe₂₀)_(100-Z)B_(z),the magnitude M_(effective) of the effective diamagnetic field waslarger than the saturated magnetization amount Ms in all compositions.

From the results of the above-described Tables 1 to 3, it was revealedthat in a case where the amount z of B is within a range of 30 atomic %or less, a magnitude correlation of the saturated magnetization amountMs and the magnitude M_(effective) of the effective diamagnetic field isdetermined by the ratio of Co and Fe.

Therefore, a composition of the Co—Fe—B alloy where the magnitudeM_(effective) of the effective diamagnetic field is less than thesaturated magnetization amount Ms of the memory layer 17 is as follows:

(Co_(x)—Fe_(y))_(100-z)−B_(z),

Here, 0≦_(Cox)≦70,

30≦Fe_(y)≦100,

0<B_(z)≦30.

Experiment 3

In a spin injection type memory of the Gbit class, it was assumed thatthe size of the memory element is 100 nmφ. Therefore, in experiment 3,the thermal stability was evaluated by using a memory element having thesize of 50 nmφ.

In the composition of Co—Fe—B alloy, a composition ratio (atomic %) ofCoFe and B was fixed to 80:20, and a composition ratio x (atomic %) ofCo in CoFe was changed to 90%, 80%, 70%, 60%, 50%, 40%, 30%, 20%, 10%,and 0%.

The details of the sample other than the sample size were substantiallythe same as those in the experiment 1.

In a case where the size of the memory element 3 was 50 nmφ, arelationship between an amount of Co (content in CoFe; atomic %) in theCo—Fe—B alloy, and the index Δ (KV/k_(B)T) of thermal stability wereshown in FIG. 6.

As can be seen from FIG. 6, when the element size was 50 nmφ, Co—Fe—Balloy composition dependency of the thermal stability index Δ waslargely varied from the Co—Fe—B alloy composition dependency of Aobtained in the elliptical memory element having a short axis of 0.09μm×a long axis of 0.18 μm shown in FIG. 5.

According to FIG. 6, the high thermal stability was maintained only inthe case of Co—Fe—B alloy composition where Fe is 60 atomic % or more.

As a result of various reviews, it was clear that the reason why theCo—Fe—B alloy containing Fe of 60 atomic % or more shows the highthermal stability Δ in the extremely minute memory element was revealedto be because the magnetization of the Co—Fe—B alloy faced a directionperpendicular to a film face.

The reason why the magnetization of the Co—Fe—B alloy faces thedirection perpendicular to the film face is considered to be because ofa composition in which the magnitude M_(effective) of the effectivediamagnetic field is significantly smaller than the saturatedmagnetization amount Ms.

In addition, the reason why the thermal stability is secured even in thecase of the extremely minute element of a perpendicular magnetizationfilm is related to Hk (effective anisotropy field) in the equation (2),and Hk of the perpendicular magnetization film becomes a valuesignificantly larger than that in the in-plane magnetization film. Thatis, in the perpendicular magnetization film, due to an effect of largeHk, it is possible to maintain a high thermal stability Δ even in thecase of the extremely minute element not capable of securing asufficient thermal stability Δ in the in-plane magnetization film.

From the above-described experiment results, in regard to the Co—Fe—Balloy having a composition of (Co_(x)Fe_(100-x))₈₀B₂₀, in a case wherethe amount of Fe_(100-x) is 60 or more, this alloy may be said to besuitable for the memory device of the Gbit class using the spininjection.

Experiment 4

As can be seen from the above-described experiment 3, in a case theamount of F was 60 or more in the Co—Fe—B alloy having a composition of(Co_(x)Fe_(100-x))₈₀B₂₀, this alloy was suitable for the memory deviceof the Gbit class using the spin injection. In experiment 4, a memoryelement having the size of 50 nmφ was manufactured using the Co—Fe—Balloy containing B in an amount of 5 to 30 atomic %, and the thermalstability was evaluated.

The details other than the element size were substantially the same asthose in the experiment 1.

A relationship between the index Δ (KV/k_(B)T) of the thermal stabilityand the Co—Fe—B alloy having a composition(Co_(x)Fe_(100-x))_(100-z)B_(z) in which an amount x of Co was 50, 40,30, 20, 10, and 0, and an amount z of B was 5, 10, 20, and 30 was shownin Table 4.

TABLE 4 (Co₅₀—Fe₅₀)_(100−z)—B_(z) (Co₄₀—Fe₆₀)_(100−z)—B_(z)(C₃₀—Fe₇₀)_(100−z)—B_(z) (Co₂₀—Fe₈₀)_(100−z)—B_(z)(Co₁₀—Fe₉₀)_(100−z)—B_(z) Fe_(100−z)—B_(z) B_(z) = 19 40 42 42 43 44 5atomic % B_(z) = 20 41.5 43 44 44 45 10 atomic % B_(z) = 20 43 44 45 4646 20 atomic % B_(z) = 21 45 47 48 48 48 30 atomic %

As can be seen from Table 4, the thermal stability Δ in all compositionsexcept that a case where the amount x of Co was 50, and the amount z ofB was 5 to 30 was maintained to be large.

That is, as is the case with the result of the experiment 4, it wasrevealed that the amount x of Co of 50 and 60 became a boundary line forsecuring high thermal stability in a extremely minute elementcorresponding to the spin injection type memory of the Gbit class.

Therefore, from the above-described result, it was revealed that theCo—Fe—B alloy of the memory layer 17 was suitable for manufacturing thespin injection type memory of the Gbit class in the followingcomposition:

(Co_(x)—Fe_(y))_(100-z)−B_(z),

Here, 0≦Co_(x)≦40,

60≦Fe_(y)≦100,

0<B_(z)≦30.

In addition, in regard to the Co—Fe—B alloy, in a composition where theratio of Fe was great in Co and Fe, the difference between theM_(effective) and Ms becomes large, and this alloy is apt to bemagnetized, and therefore it is easy to secure thermal stability.

Therefore, in a case where the capacity of the magnetic memory increasesand the size of the memory element 3 decreases, it is easy to securethermal stability in the Co—Fe—B alloy containing a large amount of Fe.

Therefore, for example, in consideration of a situation in which thespin injection type magnetic memory of the Gbit class is realized by thememory layer 17 in which the amount y of Fe is 60, and the size thereofis 70 nmφ, it is preferable that whenever the diameter of the memoryelement 3 decreases by 5 nmφ, the amount y of Fe in the Co—Fe—B alloyincrease by a value of 5.

For example, in the case of the (Co_(x)—Fe_(y))_(100-z)—B_(z), theamount y of Fe is set in a manner that an atomic % as a content in CoFeis 65%, 70%, 75%, 80%, . . . (in terms of the amount x of Co, 35%, 30%,25%, 20%, . . . ), and this is a more appropriate example to correspondto the size reduction of the memory element.

Experiment 5

Next, in the following experiments 5 and 6, investigation is made into aconfiguration in which the upper and lower interfaces of the memorylayer 17 comes into contact with oxide and a structure in which thememory layer 17 is formed of Co—Fe—B to which at least one of thenon-magnetic metal and the oxide is added, instead of being formed of asingle layer of Co—Fe—B.

First, in the experiment 5, samples (1) to (24) were used. The samples 1to 24 are samples corresponding to the memory element 3 having astructure shown in FIG. 2A.

In addition, the samples (1) to (23) correspond to the memory element 3of this embodiment and the sample (24) corresponds to a comparativeexample.

Specific layered structures of the samples (1) to (24) are shown inFIGS. 6A to 6E.

Similarly to the experiments 1 to 4, a thermal oxide film having athickness of 300 nm was formed on a silicon substrate having a thicknessof 0.725 mm, and the memory element 3 having a configuration shown inFIG. 6A was formed on the thermal oxide film.

As shown in FIG. 6A, layered structures of the samples (1) to (24) wereset as follows.

-   -   Underlying layer 14: Laminated film of a Ta film having a film        thickness of 10 nm and a Ru film having a film thickness of 25        nm    -   Magnetization-fixed layer 15: Laminated film of a CoPt film        having a film thickness of 2 nm, an Ru film having a film        thickness 0.8 nm, and a CoFeB film having a film thickness of        2.0 nm    -   Insulating layer 16: Magnesium oxide film having a film        thickness of 0.9 nm    -   Memory layer 17: Laminated film of a CoFeB film and at least one        of non-magnetic metal and oxide that has various film thickness,        in which a total film thickness is 2.0 nm    -   Cap layer 18: Laminated film of oxide having a film thickness of        0.8 nm, a Ta film having a film thickness of 3 nm, a Ru film        having a film thickness of 3 nm, and a Ta film having a        thickness of 3 nm

In regard to the samples (1) to (23), at least one side of Ti, V, Nb,Zr, Ta, Hf, and Y as the non-magnetic metal, and MgO, SiO₂, and Al—O asthe oxide is added to the memory layer 17 including CoFeB as a maincomponent.

In regard to the samples (1) to (4), and (16) to (21), as shown in FIG.6B, the memory layer 17 is configured to have a laminated structure of aCoFeB film, Ti, V, Nb, Zr, Ta, Hf, or Y film, and a CoFeB film. As shownin Table 5 as described below, each of the samples (1) to (4), in thetotal film thickness of 2.0 nm as the memory layer 17, a film thicknessof the Ta film was set to 0.1 nm, 0.2 nm, 0.3 nm, and 0.4 nm,respectively. In addition, in regard to each of the samples (16) to(21), in the total film thickness of 2.0 nm as the memory layer 17, eachfilm thickness of Ti, V, Nb, Zr, Hf, and Y films was set to 0.1 nm.

In regard to the samples (5) to (11), as shown in FIG. 6C, the memorylayer 17 was configured to have a laminated structure of a CoFeB film, aTa film, an MgO film, and a CoFeB film. In regard to each of the samples(5) to (11), in the total film thickness of 2.0 nm as the memory layer17, a film thickness of the Ta film and the MgO film was changed.

In the sample (5), the MgO film: 0.1 nm, and the Ti Film: 0.1 nm.

In the sample (6), the MgO film: 0.15 nm, and the Ta Film: 0.15 nm.

In the sample (7), the MgO film: 0.1 nm, and the Ta Film: 0.2 nm.

In the sample (8), the MgO film: 0.2 nm, and the Ta Film: 0.1 nm.

In the sample (9), the MgO film: 0.2 nm, and the Ta Film: 0.2 nm.

In the sample (10), the MgO film: 0.25 nm, and the Ta Film: 0.15 nm.

In the sample (11), the MgO film: 0.15 nm, and the Ta Film: 0.25 nm.

In regard to the samples (12) to (15), and (22) and (23), as shown inFIG. 6D, the memory layer 17 was configured to have a laminatedstructure of an MgO, SiO₂, or Al—O film, and a CoFeB film. As shown inTable 5 described later, in regard to each of the samples (12) to (15),in the total film thickness of 2.0 nm as the memory layer 17, a filmthickness of the MgO film was set to 0.1 nm, 0.2 nm, 0.3 nm, and 0.4 nm,respectively. In addition, in regard to each of the samples (22) and(23), in the total film thickness of 2.0 nm as the memory layer 17, eachfilm thickness of the SiO₂ and Al—O films was set to 0.1 nm.

Each of the samples was set to the above-described structure, and a Cufilm (not shown) having a film thickness of 100 nm (serving as a wordline described below) was provided between the underlying layer 14 andthe silicon substrate.

Each layer other than the insulating layer 16 formed of a magnesiumoxide film was formed using a DC magnetron sputtering method.

The insulating layer 16 formed of the magnesium oxide (MgO) film wasformed using a RF magnetron sputtering method.

The magnetization-fixed layer 15 is laminated ferri-coupled, and acoupling strength thereof was substantially 5 kOe.

In addition, after forming each layer of the memory element 3, a heatingtreatment was performed in a magnetic field heat treatment furnace.

Next, after masking a word line portion by a photolithography, aselective etching by Ar plasma was performed with respect to a laminatedfilm other than the word line portion, and thereby the word line (lowerelectrode) was formed. At this time, a portion other than the word linewas etched to the depth of 5 nm in the substrate.

Then, a mask of a pattern of the memory element 3 by an electron beamdrawing apparatus was formed, a selective etching was performed withrespect to the laminated film, and thereby each sample as the memoryelement 3 was formed. A portion other than the memory element 3 wasetched to a portion of the word line immediately over the Cu layer.

In addition, in the memory element for the characteristic evaluation, itis necessary to make a sufficient current flow to the memory element soas to generate a spin torque necessary for the magnetization inversion,such that it is necessary to suppress the resistance value of the tunnelinsulating layer. Therefore, a pattern of the memory element 3 was setto a circular shape having a short axis of 0.05 μm×a long axis of 0.05μm, and an area resistance value (Ωμm²) of the memory element 3 was setto 20 Ωμm².

Next, a portion other than the memory element 3 was insulated bysputtering Al₂O₃ to have a thickness of substantially 100 nm. Then, abit line serving as an upper electrode and a measurement pad were formedby using photolithography.

In this manner, a sample of the memory element 3 was manufactured.

A composition of the Co—Fe—B alloy of the magnetization-fixed layer 15and the memory layer 17 was set to (Co30%-Fe70%)80%-B20% (atomic %).

In addition, as a comparative example (24), as shown in FIG. 6E, thememory layer 17 was configured by a CoFeB single layer having athickness of 2 nm.

Measurement of Magnetization Curve

A magnetization curve of each sample was measured by a VSM measurementusing a Vibrating Sample Magnetometer. At this time, a bulk film portionof approximately 8 mm×8 mm specially designed for the magnetizationcurve evaluation was used in the measurement instead of an element afterbeing subjected to a micromachining. In addition, a magnetic field formeasurement was applied in a direction perpendicular to a film face.

Measurement of Thermal Stability

An inversion current value was measured for the purpose of evaluatingthe thermal stability of the memory element 3.

A current having a pulse width of 10 μs to 100 ms is made to flow toeach sample, and then a resistance value of each sample was measured.The inclination of a pulse width dependency of the inversion currentvalue corresponds to the above-described index Δ of the thermalstability of each sample. The less the inversion current value ischanged (the inclination is small) by the pulse width, the more thememory element is strengthened against thermal disturbance.

In addition, twenty samples with the same configuration weremanufactured, respectively, for each sample to take variation in thesamples into consideration, the above-described measurement wasperformed, and an average value of the inversion current value and theindex Δ of the thermal stability were obtained.

Coercive force of each of the samples (1) to (24) including the memorylayer 17, which was obtained by VSM, is shown in Table 5.

TABLE 5 Amount of additive converted into a Coercive Sample No Additivefilm thickness (nm) force(Oe) KV/k_(B)T  (1) Ta 0.1 258 58  (2) 0.2 41267  (3) 0.3 450 68  (4) 0.4 0 —  (5) MgO/Ta 0.1/0.1 372 63  (6)0.15/0.15 288 61  (7) 0.1/0.2 255 55  (8) 0.2/0.1 270 60  (9) 0.2/0.2 0— (10) 0.25/0.15 0 — (11) 0.15/0.25 0 — (12) MgO 0.1 189 51 (13) 0.2 21053 (14) 0.3 216 53 (15) 0.4 0 — (16) Ti 0.1 241 56 (17) V 0.1 235 55(18) Nb 0.1 235 55 (19) Zr 0.1 230 55 (20) Hf 0.1 228 53 (21) Y 0.1 22054 (22) SiO2 0.1 183 50 (23) AI-O 0.1 195 51 (24) None — 150 43

As can be seen from Table 5, among the samples (1) to (4), and (16) to(21), in which the upper and lower sides of the memory layer 17 wereformed of oxide (MgO), and non-magnetic metal was added to the memorylayer 17, coercive force greater than that of the sample (24) of thecomparative example, was obtained in the samples (1) to (3), and (16) to(21).

In addition, among the samples (5) to (11), in which the upper and lowersides of the memory layer 17 were formed of oxide (MgO), and oxide ofMgO and non-magnetic metal were added to the memory layer 17, coerciveforce greater than that of the sample (24) of the comparative examplewas obtained in the samples (5) to (8).

In addition, among the samples (12) to (15), the sample (22), and thesample (23), in which the upper and lower sides of the memory layer 17were formed of oxide (MgO), and oxide of MgO was added to the memorylayer 17, coercive force greater than that of the sample (24) of thecomparative example was obtained in the samples (12) to (14), the sample(22), and the sample (23).

That is, in the samples using the memory layer 17 to which at least oneof the non-magnetic metal and the oxide was added, in a case where theoxide was present at the upper and lower sides of the memory layer 17,and a volume ratio of the additive was a predetermined value or less,the coercive force was obtained.

Here, from the comparison of the coercive force and KV/k_(B)T betweenthe sample (24) using the memory layer 17 of the CoFeB single layer, andthe samples (1) to (3), the samples (16) to (21), the samples (5) to(8), the samples (12) to (14), the sample (22), and the sample (23),which use the memory layer 17 to which at least one of the non-magneticmetal and oxide was added and the coercive force was obtained, it can beseen that in the case of satisfying the condition under which thecoercive force is obtained, the memory element 3 using the memory layer17 to which at least one of the non-magnetic metal and the oxide clearlyhas large coercive force and KV/k_(B)T.

From this, the configuration of the embodiment, that is, the memoryelement 3 using the memory layer 17 in which the oxide is present atupper and lower sides thereof, and at least one of the non-magneticmetal and the oxide is added thereto, is a suitable configuration forrealizing high coercive force and KV/k_(B)T.

The reason why coercive force and KV/k_(B)T are improved when oxide ispresent at the upper and lower side of the memory layer 17 to which atleast one of the non-magnetic metal and the oxide is added is consideredto be because when the memory layer 17 comes into contact with theoxide, a chance for Co or Fe to couple with oxygen in MgO is increased,and therefore perpendicular magnetic anisotropy caused by an orbitalhybridization is more enhanced.

The reason why coercive force in the memory layer 17 to which at leastone of non-magnetic metal and oxide is added becomes larger than that inthe memory layer 17 using a CoFeB single layer is guessed to be becausein the case of the CoFeB single layer, perpendicular magnetic anisotropycaused by an orbital hybridization different at the upper and lowersides in a single magnetic layer is induced, such that when viewed as awhole, a force for enhancing perpendicular magnetic anisotropy isdifficult to be utilized effectively.

Contrary to this, in the case of the memory layer 17 to which at leastone of non-magnetic metal and oxide is added, since a material differentfrom CoFeB is present in the memory layer 17, even as perpendicularmagnetic anisotropy different at the upper and lower sides is induced, adifference in perpendicular magnetic anisotropy is alleviated by adifferent layer, and therefore a chance for Co or Fe to couple withoxygen in MgO is increased and perpendicular magnetic anisotropy isenhanced more effectively.

Experiment 6

Next, a sample having a dual MTJ structure in which magnetization-fixedlayers 15U and 15L are provided at the upper and lower sides of thememory layer 17 similarly to the memory element 3 shown in FIG. 2B wasmanufactured by using a material of the memory layer 17 of the samples(1) to (3), the samples (5) to (8), and the samples (12) to (14) shownin Table 5.

As the upper magnetization-fixed layer 15U, a laminated film of CoFeBhaving a film thickness of 2 nm and TbFeCo layer having a film thicknessof 15 nm was used.

In the two insulating layers 16U and 16L, a difference in a filmthickness is present, and a total RA was adjusted to be 30 Ωμm².

A basis element manufacturing process is the same as the experiment 5.

Result of the same measurement as the experiment 5 is shown in Table 6.In addition, samples manufactured with a dual structure using the samememory layer structure as the samples (1) to (3), the samples (5) to(8), and the samples (12) to (14) are shown as samples (1′) to (3′),samples (5′) to (8′), and samples (12′) to (14′).

TABLE 6 Amount of additive converted into a Coercive Sample No Additivefilm thickness (nm) force(Oe) KV/k_(B)T (1′) Ta 0.1 262 56 (2′) 0.2 40065 (3′) 0.3 435 66 (5′) MgO/Ta 0.1/0.1 380 63 (6′) 0.15/0.15 290 60 (7′)0.1/0.2 255 54 (8′) 0.2/0.1 267 60 (12′)  MgO 0.1 183 50 (13′)  0.2 21553 (14′)  0.3 222 54

In the dual structure, in samples using the memory layer 17 to which atleast one of non-magnetic metal and oxide is added, high coercive forceand KV/k_(B)T were obtained.

Here, a matter of importance is that since perpendicular magneticanisotropy largely depends on the memory layer 17 and a materialadjacent to the memory layer 17, in the case of manufacturing a dualMTJ, as a material of the memory layer 17 interposed between two oxides,when a material in which coercive force becomes large when interposedbetween the two oxice is used, relatively excellent KV/k_(B)T areobtained.

From this viewpoint, a memory element 3, which uses a memory layer 17having a configuration shown in Table 6, that is, a configuration inwhich oxide are provided at the upper and lower side thereof, and atleast one of non-magnetic metal and oxide is added, has a suitableconfiguration for realizing enhanced perpendicular magnetic anisotropy,and high coercive force and KV/k_(B)T.

From the above-described experiments 5 and 6, it can be seen that whenat least one side of Ti, V, Nb, Zr, Ta, Hf, and Y as the non-magneticmetal, and MgO, SiO₂, and Al—O as the oxide is added to Co—Fe—B magneticlayer making up the memory layer 17, and oxide is provided at the upperand lower sides of the memory layer 17, perpendicular magneticanisotropy is enhanced, and coercive force and thermal stabilityKV/k_(B)T are improved compared to a memory layer is configured by aCo—Fe—B magnetic layer alone.

In addition, this configuration may be applied to a dual MTJ in additionto a single MTJ.

Hereinbefore, the is described, but the present disclosure is notlimited to the layer configuration of the memory element 3 illustratedin the above-described embodiment, and it is possible to adopt variouslayer configurations.

For example, in the embodiment, the Co—Fe—B composition of the memorylayer 17 and the magnetization-fixed layer 15 was made to be the same aseach other, but it is not limited to the above-described embodiment, andvarious configurations may be made without departing from the scope ofthe present disclosure.

In addition, the underlying layer 14 and the cap layer 18 may be formedof a single material, or may be formed by a laminated structure of aplurality of materials.

In addition, the magnetization-fixed layer 15 may be formed by a singlelayer or may use a laminated ferri-pin structure including twoferromagnetic layers and a non-magnetic layer. In addition, a structurein which anti-ferromagnetic film is applied to the laminated ferri-pinstructure film is possible.

It should be understood that various changes and modifications to thepresently preferred embodiments described herein will be apparent tothose skilled in the art. Such changes and modifications can be madewithout departing from the spirit and scope and without diminishing itsintended advantages. It is therefore intended that such changes andmodifications be covered by the appended claims.

The application is claimed as follows:
 1. A storage element comprising:a memory layer having a first magnetization state of a first material; afixed magnetization layer having a second magnetization state of asecond material; an intermediate layer including a nonmagnetic materialand provided between the memory layer and the fixed magnetization layer;wherein the first material includes Co—Fe—B alloy, and at least one of anon-magnetic metal and an oxide.
 2. The storage element according toclaim 1, wherein a thickness of the memory layer is from 0.5 nm to 30nm.
 3. The storage element according to claim 1, wherein the memorylayer is configured to receive an effective diamagnetic field that issmaller than a saturated magnetization amount of the memory layer. 4.The storage element according to claim 1, wherein the intermediate layerincludes at least one of magnesium oxide, aluminum oxide, aluminumnitride, SiO₂, Bi₂O₃, MgF₂, CaF, SrTiO₂, AlLaO₃, and AlNO.
 5. Thestorage element according to claim 1, wherein the non-magnetic metalincludes at least one of Ti, V, Nb, Zr, Ta, Hf, and Y.
 6. The storageelement according to claim 1, wherein the oxide includes at least one ofMgO, SiO₂, and aluminum oxide.
 7. The storage element according to claim1, further comprising an oxide layer, wherein the memory layer isprovided between the oxide layer and the intermediate layer.
 8. Thestorage element according to claim 1, wherein the intermediate layerincludes magnesium oxide.
 9. The storage element according to claim 8,wherein a thickness of the intermediate layer is 1.5 nm or less.
 10. Thestorage element according to claim 1, wherein the Co—Fe—B alloy having acomposition of (Co_(x)Fe_(100-x))₈₀B₂₀, and wherein x is an integer andis equal to or less than
 40. 11. The storage element according to claim1, wherein the first magnetization state of the first material isconfigured to be changed by a current.
 12. A memory comprising: astorage element; and two types of lines that intersect with each other,wherein the storage element includes a memory layer having a firstmagnetization state of a first material; a fixed magnetization layerhaving a second magnetization state of a second material; anintermediate layer including a nonmagnetic material and provided betweenthe memory layer and the fixed magnetization layer; wherein the firstmaterial includes Co—Fe—B alloy, and at least one of a non-magneticmetal and an oxide.
 13. The memory according to claim 12, wherein athickness of the memory layer is from 0.5 nm to 30 nm.
 14. The memoryaccording to claim 12, wherein the memory layer is configured to receivean effective diamagnetic field that is smaller than a saturatedmagnetization amount of the memory layer.
 15. The memory according toclaim 12, wherein the Co—Fe—B alloy having a composition of(Co_(x)Fe_(100-x))₈₀B₂₀, and wherein x is an integer and is equal to orless than
 40. 16. An electronic apparatus comprising: a magnetic storageelement including: a memory layer having a first magnetization state ofa first material; a fixed magnetization layer having a secondmagnetization state of a second material; an intermediate layerincluding a nonmagnetic material and provided between the memory layerand the fixed magnetization layer; wherein the first material includesCo—Fe—B alloy, and at least one of a non-magnetic metal and an oxide.17. The electronic apparatus according to claim 16, wherein a thicknessof the memory layer is from 0.5 nm to 30 nm.
 18. The electronicapparatus according to claim 16, wherein the Co—Fe—B alloy having acomposition of (Co_(x)Fe_(100-x))₈₀B₂₀, and wherein x is an integer andis equal to or less than 40.